sot-89-3l 1. base 2. collector 3. emitter transistor (npn) features z small flat package z high breakdown voltage z excellent dc current gain linearity maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =0.1ma,i e =0 100 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =100v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) * v ce =2v, i c =100ma 90 400 dc current gain h fe(2) * v ce =2v, i c =500ma 25 collector-emitter saturation voltage v ce(sat) * i c =500ma,i b =50ma 0.5 v base-emitter saturation voltage v be(sat) * i c =500ma,i b =50ma 1.5 v base-emitter voltage v be * v ce =10v, i c =10ma 0.6 0.7 v transition frequency f t v ce =5v,i c =10ma 160 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 12 pf *pulse test classification of h fe 1 rank w v u range 90 C 180 135 C 270 200 C 400 marking bw bv bu symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current 1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 2SD1005 1 www.htsemi.com semiconductor jinyu
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